STZT2222A small signal npn transistor preliminary data n silicon epitaxial planar npn transistor n sot-223 plastic package for surface mounting circuits n tape and reel packing n the pnp complementary type is stzt2907a applications n well suitable for smd mother board assembly n small load switch transistor with high gain and low saturation voltage ? internal schematic diagram february 2003 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 75 v v ceo collector-emitter voltage (i b = 0) 40 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 0.6 a i cm collector peak current (t p < 5 ms) 0.8 a p tot total dissipation at t amb = 25 o c 1.3 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 sot-223 type marking STZT2222A n22a 1/5
thermal data r thj-amb thermal resistance junction-ambient max 96.1 o c/w device mounted on a pcb area of 1 cm 2 eletrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 50 v v cb = 50 v t j = 125 o c 10 10 na m a i cex collector cut-off current (v be = -3v) v ce = 60 v 10 na i bex base cut-off current (v be = -3v) v ce = 60 v 20 na i ebo emitter cut-off current (i e = 0) v eb = 3 v 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 10 m a 75 v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = 10 ma 40 v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 m a 6v v ce(sat) * collector-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma 0.3 1 v v v be(sat) * base-emitter saturation voltage i c = 150 ma i b = 15 ma i c = 500 ma i b = 50 ma 0.6 1.2 2 v v h fe * dc current gain i c = 0.1 ma v ce = 10 v i c = 1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 150 ma v ce = 1 v i c = 500 ma v ce = 10 v 35 50 75 100 50 40 300 h fe small signal current gain i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 50 75 300 375 h ie input impedance i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 2 0.25 8 1.25 w w h re reverse voltage ratio i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 8x10 -4 4x10 -4 h oe output impedance i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 5 25 35 200 m s m s f t transition frequency i c = 20 ma v ce = 20 v f = 100 mhz 270 mhz c cbo collector-base capacitance i e = 0 v cb = 10 v f = 100 khz 4 8 pf c ebo emitter-base capacitance i c = 0 v eb = 0.5 v f = 100 khz 20 25 pf nf noise figure f = 1 khz d f = 200 hz r g = 1k w i c = 0.1 ma v ce = 10 v 4db STZT2222A 2/5
electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit t d delay time i c = 150 ma i b = 15 ma v cc = 30 v 510ns t r rise time 12 25 ns t s storage time i c = 150 ma v cc = 30 v i b1 = -i b2 = 15 ma 185 225 ns t f fall time 24 60 ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % STZT2222A 3/5
dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data STZT2222A 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2003 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com STZT2222A 5/5
|
